公开(公告)号：US20170236894A1

公开(公告)日：2017-08-17

申请号：US15383159

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Ki-hyung NAM ,  Byung Yoon KIM ,  Bong-Soo KIM ,  Eunjung KIM ,  Yoosang HWANG

IPC: H01L49/02

CPC classification number: H01L28/56 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/82 ,  H01L28/88 ,  H01L28/90 ,  H01L28/92

Abstract: Provided is a semiconductor device. The semiconductor device includes a capacitor structure including a plurality of lower electrodes, a dielectric layer that covers surfaces of the plurality of lower electrodes, and an upper electrode on the dielectric layer. The semiconductor device further includes a support structure that supports the plurality of lower electrodes. The support structure includes a first support region that covers sidewalls of one of the plurality of lower electrodes, and an opening that envelops the first support region when the semiconductor device is viewed in plan view.