公开(公告)号：US20240006250A1

公开(公告)日：2024-01-04

申请号：US18150324

申请日：2023-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunnam KIM ,  Kiseok LEE ,  Byeongjoo KU

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L22/20 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76879 ,  H01L21/76816

Abstract: Disclosed is a semiconductor fabrication method comprising forming a first conductive structure and a second conductive structure, measuring a misalignment value between the first conductive structure and the second conductive structure, based on the measured misalignment value selecting a reticle from a set of reticles, and using the selected reticle to form a connection conductive structure that electrically connects the first conductive structure to the second conductive structure.