公开(公告)号：US20240145416A1

公开(公告)日：2024-05-02

申请号：US18384250

申请日：2023-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonyoung CHOI ,  Minwoo Rhee ,  Sungyoung Yoon ,  Jaehyun Phee ,  Bumki Moon ,  Kyeongbin Lim

IPC: H01L23/00 ,  H01L23/528

CPC classification number: H01L24/03 ,  H01L23/5283 ,  H01L24/05 ,  H01L24/08 ,  H01L2224/03444 ,  H01L2224/05147 ,  H01L2224/05447 ,  H01L2224/08145

Abstract: A substrate bonding method includes: forming first plasma on a bonding surface of a first substrate at atmospheric pressure by using a mixed gas including an inert gas and water vapor, to thereby perform surface activation treatment on the bonding surface of the first substrate; forming second plasma on a bonding surface of a second substrate at atmospheric pressure by using the mixed gas, to thereby perform surface activation treatment on the bonding surface of the second substrate; bonding the bonding surface of the first substrate and the bonding surface of the second substrate to each other; and moving each of the first substrate and the second substrate at a constant speed in a region above a linear reactor in which the first plasma and the second plasma are formed.

公开(公告)号：US20240321805A1

公开(公告)日：2024-09-26

申请号：US18405791

申请日：2024-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungho Hahn ,  Wooyoung Kim ,  Minwoo Rhee ,  Bumki Moon ,  Kyeongbin Lim

IPC: H01L23/00

CPC classification number: H01L24/27 ,  H01L2224/27614 ,  H01L2224/27616 ,  H01L2224/27848 ,  H01L2924/1434

Abstract: A method of manufacturing a semiconductor device includes preparing a first substrate and a second substrate respectively including a bonding layer having metal pads and a dielectric layer, performing a planarization process on a surface of the bonding layer of each of the first and second substrates, applying wet atomic layer etching to the surface of the bonding layer so that a surface of the metal pad is recessed to a target depth, and bonding the bonding layer of the first substrate to the bonding layer of the second substrate using an annealing process.