Abstract:
An information processing system includes a first electronic device configured to collect data, a second electronic device configured to obtain at least a portion of the data from the first electronic device and process the at least the portion of the data, and a server configured to support a sharing service that obtains the processed data from the second electronic device and posts the processed data in a designated method. The second electronic device is configured to transmit account information on at least one account joined to the sharing service to the first electronic device. The first electronic device is configured to analyze the account information to verify the at least one account, generate an object supporting posting the processed data on the sharing service, and output the object to a display of the first electronic device.
Abstract:
An information processing system includes a first electronic device configured to collect data, a second electronic device configured to obtain at least a portion of the data from the first electronic device and process the at least the portion of the data, and a server configured to support a sharing service that obtains the processed data from the second electronic device and posts the processed data in a designated method. The second electronic device is configured to transmit account information on at least one account joined to the sharing service to the first electronic device. The first electronic device is configured to analyze the account information to verify the at least one account, generate an object supporting posting the processed data on the sharing service, and output the object to a display of the first electronic device.
Abstract:
A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure.
Abstract:
A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.
Abstract:
A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.
Abstract:
A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.