公开(公告)号：US08987725B2

公开(公告)日：2015-03-24

申请号：US14150944

申请日：2014-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Jin-Hee Kang ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Yul-Kyu Lee

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/326 ,  H01L29/4908

Abstract: A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.

Abstract translation: 一种平板显示装置，包括：包括第一和第二区域的基板; 在包括半导体材料的衬底的第一区域上的有源层; 在包括半导体材料的基板的第二区域上的下电极; 在其上的包括有源层和下电极的基板上的第一绝缘层; 覆盖有源层的第一绝缘层上的栅电极，包括第一导电层图案和第二导电层图案; 所述第一绝缘层上的上电极覆盖所述下电极并且包括所述第一导电层图案和所述第二导电层图案; 栅电极上的第二绝缘层和暴露有源层的部分和上电极的部分的上电极; 以及连接到有源层的暴露部分的源电极和漏电极。

公开(公告)号：US08951083B2

公开(公告)日：2015-02-10

申请号：US14166508

申请日：2014-01-28

Applicant: Samsung Display Co., Ltd.

Inventor： Min-Hyuk Choi ,  Chun-Gi You ,  Jong-Hyun Park ,  Young-Dong Kwon ,  Jin-Hee Kang

IPC: H01J9/24 ,  H05B33/10 ,  H01L27/32 ,  H01L51/52 ,  H01J9/00

CPC classification number: H05B33/10 ,  H01L27/3211 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5215

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. The present invention discloses an organic light emitting device including: a plurality of scanning signal lines; a first and second contact assistant; a plurality of data lines crossing the scanning signal lines; a driving voltage line; and a first pixel, a second pixel, and a third pixel alternately arranged, wherein each pixel includes: a switching transistor, a driving transistor including an output terminal, a pixel electrode connected to the output terminal, the pixel electrode including at least two layers including a transflective electrode, an organic light emitting member arranged on the pixel electrode, and a common electrode arranged on the organic light emitting member, wherein the first pixel further includes a supplementary member arranged on the pixel electrode, and wherein the first and second contact assistants include the same material as the supplementary member.

Abstract translation: 本发明涉及一种有机发光器件及其制造方法。 本发明公开了一种有机发光装置，包括：多条扫描信号线; 第一和第二接触助手; 与扫描信号线交叉的多条数据线; 驱动电压线; 以及交替布置的第一像素，第二像素和第三像素，其中每个像素包括：开关晶体管，包括输出端的驱动晶体管，连接到所述输出端的像素电极，所述像素电极包括至少两层 包括透反射电极，布置在像素电极上的有机发光部件和布置在有机发光部件上的公共电极，其中第一像素还包括配置在像素电极上的辅助部件，并且其中第一和第二接触 助理包括与补充成员相同的材料。

公开(公告)号：US08952368B2

公开(公告)日：2015-02-10

申请号：US13898186

申请日：2013-05-20

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

IPC: H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L51/5281 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/66765 ,  H01L29/78678

Abstract: A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

Abstract translation: 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。