DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    显示装置及其制造方法

    公开(公告)号:US20140256076A1

    公开(公告)日:2014-09-11

    申请号:US14281146

    申请日:2014-05-19

    CPC classification number: H01L27/127 H01L27/1225 H01L27/1248 H01L27/3262

    Abstract: A display device includes a substrate; a gate wire including a gate electrode and a first capacitor electrode formed on the substrate; a gate insulating layer formed on the gate wire; a semiconductor layer pattern formed on the gate insulating layer, and including an active region overlapping at least a part of the gate electrode and a capacitor region overlapping at least a part of the first capacitor electrode; an etching preventing layer formed on a part of the active region of the semiconductor layer pattern; and a data wire including a source electrode and a drain electrode formed over the active region of the semiconductor layer from over the etching preventing layer, and separated with the etching preventing layer therebetween, and a second capacitor electrode formed on the capacitor region of the semiconductor layer.

    Abstract translation: 显示装置包括基板; 栅极线,其包括形成在所述基板上的栅极电极和第一电容器电极; 形成在栅极线上的栅绝缘层; 形成在所述栅极绝缘层上的半导体层图案,并且包括与所述栅电极的至少一部分重叠的有源区域和与所述第一电容器电极的至少一部分重叠的电容器区域; 形成在半导体层图案的有源区的一部分上的防蚀层; 以及数据线,其包括源极电极和漏电极,所述源电极和漏极形成在所述半导体层的有源区上方,从所述防蚀层的上方形成并与所述防蚀层隔开,并且形成在所述半导体的电容器区域上的第二电容器电极 层。

    Display device and method for manufacturing the same

    公开(公告)号:US08877534B2

    公开(公告)日:2014-11-04

    申请号:US14281146

    申请日:2014-05-19

    CPC classification number: H01L27/127 H01L27/1225 H01L27/1248 H01L27/3262

    Abstract: A display device includes a substrate; a gate wire including a gate electrode and a first capacitor electrode formed on the substrate; a gate insulating layer formed on the gate wire; a semiconductor layer pattern formed on the gate insulating layer, and including an active region overlapping at least a part of the gate electrode and a capacitor region overlapping at least a part of the first capacitor electrode; an etching preventing layer formed on a part of the active region of the semiconductor layer pattern; and a data wire including a source electrode and a drain electrode formed over the active region of the semiconductor layer from over the etching preventing layer, and separated with the etching preventing layer therebetween, and a second capacitor electrode formed on the capacitor region of the semiconductor layer.

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