公开(公告)号：US11164932B2

公开(公告)日：2021-11-02

申请号：US16871185

申请日：2020-05-11

Applicant: Samsung Display Co., Ltd.

Inventor： Jaewoo Jeong ,  Hyungue Kim ,  Jongjun Baek

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/3213 ,  H01L21/311 ,  H01L51/00 ,  H01L51/52 ,  H01L21/027

Abstract: A method of manufacturing a backplane for a display device includes forming an insulation layer on a substrate, forming a pad electrode layer on the insulation layer, forming a photoresist pattern on the pad electrode layer in the pad region, etching the pad electrode layer and a portion of the insulation layer by the photoresist pattern as an etch-stop layer so as to simultaneously form a pad electrode and a side protection layer, the side protection layer covering a sidewall of the pad electrode, and stripping the photoresist pattern.

公开(公告)号：US20240324383A1

公开(公告)日：2024-09-26

申请号：US18613604

申请日：2024-03-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hyungue Kim ,  Guanghai Jin

IPC: H10K59/35

CPC classification number: H10K59/353 ,  H10K59/352

Abstract: A display apparatus includes a first reference sub-pixel emitting light in a first wavelength band and having a polygonal shape in a plan view, a first sub-pixel emitting light in a second wavelength band and having a first shape in a plan view defined by a portion of imaginary circles each having a radius and a center disposed on a side of the polygonal shape, and a second sub-pixel emitting light in a third wavelength band and having a second shape in a plan view defined by another portion of the imaginary circles.

公开(公告)号：US10692954B2

公开(公告)日：2020-06-23

申请号：US15715495

申请日：2017-09-26

Applicant: Samsung Display Co., Ltd.

Inventor： Jaewoo Jeong ,  Hyungue Kim ,  Jongjun Baek

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/3213 ,  H01L21/311 ,  H01L51/00 ,  H01L51/52 ,  H01L21/027

Abstract: A method of manufacturing a backplane for a display device includes forming an insulation layer on a substrate, forming a pad electrode layer on the insulation layer, forming a photoresist pattern on the pad electrode layer in the pad region, etching the pad electrode layer and a portion of the insulation layer by the photoresist pattern as an etch-stop layer so as to simultaneously form a pad electrode and a side protection layer, the side protection layer covering a sidewall of the pad electrode, and stripping the photoresist pattern.