Pixel and display apparatus
    1.
    发明授权

    公开(公告)号:US11955079B2

    公开(公告)日:2024-04-09

    申请号:US17891948

    申请日:2022-08-19

    Abstract: A pixel includes a display element, a driving transistor, a storage capacitor, a scan transistor, and a gate control circuit. The display element may emit light for an emission period, wherein the display element includes an anode and a cathode. The driving transistor may control an amount of a driving current flowing through the display element, wherein the driving transistor includes a first gate and a second gate. The storage capacitor is electrically connected to the first gate of the driving transistor. The scan transistor may be turned on for a data-write period for transferring a data voltage to the driving transistor. The lower gate control circuit may electrically connect the second gate of the driving transistor to the anode of the display element for the emission period, and may apply a bias voltage to the second gate of the driving transistor for the data-write period.

    Emissive display device
    2.
    发明授权

    公开(公告)号:US12080223B2

    公开(公告)日:2024-09-03

    申请号:US18170508

    申请日:2023-02-16

    CPC classification number: G09G3/32 G09G2300/0842 G09G2310/0275

    Abstract: An emissive display device includes: a light emitting diode; an n-type driving transistor comprising a first driving gate electrode, a first electrode receiving a driving voltage, a second electrode transferring an output current to the anode, and a second driving gate electrode; a second transistor connected to a data line; a third transistor configured to connect the first electrode and the first driving gate electrode of the driving transistor; a storage capacitor comprising a first storage electrode and a second storage electrode connected to the first driving gate electrode; a ninth transistor transferring an overlapping electrode voltage to the second driving gate electrode; an overlapping electrode voltage line crossing the data line and receiving the overlapping electrode voltage; and a shielding electrode at an intersection of the data line and the overlapping electrode voltage line and between the data line and the overlapping electrode voltage line.

    Display device and manufacturing method thereof

    公开(公告)号:US10310342B2

    公开(公告)日:2019-06-04

    申请号:US15471892

    申请日:2017-03-28

    Abstract: A display device includes: a first substrate including a display area and a non-display area; a gate line in the display area and a gate pad in the non-display area, the gate line extending in a first direction; a data line in the display area, the data line extending in a second direction intersecting the first direction; a thin film transistor at an intersection point among the gate line and the data line; a step-difference pattern on the gate pad; and a protective layer including a first protective layer on the thin film transistor and a second protective layer on the step-difference pattern and the gate pad. The second protective layer has a height less than a height of the first protective layer.

    PIXEL AND DISPLAY APPARATUS
    4.
    发明公开

    公开(公告)号:US20230290305A1

    公开(公告)日:2023-09-14

    申请号:US17891948

    申请日:2022-08-19

    Abstract: A pixel includes a display element, a driving transistor, a storage capacitor, a scan transistor, and a gate control circuit. The display element may emit light for an emission period, wherein the display element includes an anode and a cathode. The driving transistor may control an amount of a driving current flowing through the display element, wherein the driving transistor includes a first gate and a second gate. The storage capacitor is electrically connected to the first gate of the driving transistor. The scan transistor may be turned on for a data-write period for transferring a data voltage to the driving transistor. The lower gate control circuit may electrically connect the second gate of the driving transistor to the anode of the display element for the emission period, and may apply a bias voltage to the second gate of the driving transistor for the data-write period.

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