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公开(公告)号:US20220140033A1
公开(公告)日:2022-05-05
申请号:US17398742
申请日:2021-08-10
Applicant: Samsung Display Co., Ltd.
Inventor: Eung Taek KIM , Kohei EBISUNO , Suk Hoon KU , Jin Suk LEE , Jung Mi CHOI , Young In HWANG , Tae Sik KIM , Jin Suk SEO , Hwang Sup SHIN , Taek Geun LEE , Joo Hyeon JO , Hong Jun CHOI , Hee Yeon KIM , Na Lae LEE
IPC: H01L27/32 , H01L29/792
Abstract: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.
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公开(公告)号:US20220059031A1
公开(公告)日:2022-02-24
申请号:US17397878
申请日:2021-08-09
Applicant: Samsung Display Co., Ltd.
Inventor: Eung Taek KIM , Hee Yeon KIM , Hwang Sup SHIN , Na Lae LEE , Jin Suk LEE , Taek Geun LEE , Joo Hyeon JO , Jung Mi CHOI , Hong Jun CHOI , Young In HWANG
IPC: G09G3/3233 , H01L27/32
Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.
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