公开(公告)号：US09466623B2

公开(公告)日：2016-10-11

申请号：US14081033

申请日：2013-11-15

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Young Park ,  Dong II Kim ,  Sang Gab Kim

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  G02F1/133345 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/124

Abstract: A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, plasma-treating a photoresist pattern on the common electrode material, and etching the common electrode material using the plasma-treated photoresist pattern as a mask, defining a contact hole in the second insulating layer which corresponds to the drain electrode using the plasma-treated photoresist pattern and the common electrode as a mask, forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode and forming a pixel electrode connected to the drain electrode on the third insulating layer.

Abstract translation: 制造显示装置的方法包括在衬底上形成包括栅电极，源电极和漏电极的薄膜晶体管，在薄膜晶体管上形成第一绝缘层和第二绝缘层，形成共同的 通过在第二绝缘层上沉积公共电极材料，等离子体处理公共电极材料上的光致抗蚀剂图案，以及使用等离子体处理的光致抗蚀剂图案作为掩模蚀刻公共电极材料，限定接触 使用等离子体处理的光致抗蚀剂图案和公共电极作为掩模对应于漏电极的第二绝缘层中的孔，在第二绝缘层和公共电极上形成第三绝缘层，以暴露接触孔和漏电极 以及在所述第三绝缘层上形成连接到所述漏电极的像素电极。