公开(公告)号：US20240175907A1

公开(公告)日：2024-05-30

申请号：US18220879

申请日：2023-07-12

Applicant: Samsung Display Co., LTD.

Inventor： YOUNG JE CHO ,  SANG DO YU

IPC: G01R31/00 ,  G01R31/319

CPC classification number: G01R31/002 ,  G01R31/31908 ,  G01R31/31917

Abstract: A defect evaluation method for evaluating a defect due to electrostatic discharge includes obtaining a charged map of a lower part of a test object, preparing a test pattern simulating the charged map of the lower part of the test object, contacting the test object to the test pattern, and applying a voltage to the test pattern. Accordingly, to simulate and evaluate the defect that may occur during a manufacturing process of the test object in advance. In addition, using a result obtained by the simulation and the evaluation, an arrangement of a portion vulnerable to the defect of a structure in the test object may be changed.