公开(公告)号：US20240407272A1

公开(公告)日：2024-12-05

申请号：US18671774

申请日：2024-05-22

Applicant: STMicroelectronics International N.V.

Inventor： Philippe BOIVIN ,  Simon JEANNOT

IPC: H10N70/20 ,  H10B63/10 ,  H10N70/00

Abstract: A device includes a phase change memory cell. The memory cell includes a first stack of layers including an intermediate layer of phase change material, a lower insulating layer and an upper insulating layer. The memory cell includes L-shaped first and second conductive elements. The first conductive element extends on a first side wall of the first stack. The second conductive element extends on the second side wall of the stack opposite to the first wall.