公开(公告)号：US20220077850A1

公开(公告)日：2022-03-10

申请号：US17466604

申请日：2021-09-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Romain PICHON ,  Yannick HAGUE

IPC: H03K17/13 ,  H03K17/76

Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.

公开(公告)号：US20240022242A1

公开(公告)日：2024-01-18

申请号：US18373083

申请日：2023-09-26

Applicant: STMicroelectronics (Tours) SAS

Inventor： Romain PICHON ,  Yannick HAGUE

IPC: H03K17/13 ,  H03K17/76

CPC classification number: H03K17/136 ,  H03K17/76 ,  H03K17/305

Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.

公开(公告)号：US20190214985A1

公开(公告)日：2019-07-11

申请号：US16240409

申请日：2019-01-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Ghafour BENABDELAZIZ ,  Romain PICHON

IPC: H03K17/725 ,  H03K17/60

Abstract: A circuit for controlling an anode-gate thyristor includes a first transistor that couples a thyristor gate to a first terminal to receive a potential lower than a potential of a second terminal connected to the thyristor anode. A control terminal of the first transistor is driven by a control signal which is positive with respect to the potential of the first terminal.