公开(公告)号：US20140242800A1

公开(公告)日：2014-08-28

申请号：US14190797

申请日：2014-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Hwan OH ,  Yu-Ra KIM ,  Tae-Sun KIM ,  Kwang-Sub YOON

IPC: H01L21/308 ,  H01L21/306

CPC classification number: H01L21/3086 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/32139

Abstract: A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

Abstract translation: 一种制造半导体器件的层图案的方法，所述方法包括在蚀刻对象层上形成抗反射涂层（ARC）层，使得ARC层包括具有酰亚胺基团的聚合物; 在ARC层上形成光刻胶图案; 通过光致抗蚀剂图案曝光的ARC层的湿蚀刻部分以形成ARC层图案; 并使用光致抗蚀剂图案蚀刻蚀刻对象层作为蚀刻掩模以形成层图案。