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公开(公告)号:US11810937B2
公开(公告)日:2023-11-07
申请号:US17342173
申请日:2021-06-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hae Sung Jung , Tae-Hun Lee , Jin Young Kim
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14685
Abstract: An image sensor is provided. The image sensor includes a substrate including a first side on which light is incident and a second side opposite the first side; a first separation pattern extending from the second side, the first separation pattern being interposed between unit pixels in the substrate of a light-receiving region and a light-shielding region provided around the light-receiving region; a second separation pattern extending from the first side and overlapping the first separation pattern, the second separation pattern being provided in the substrate of the light-receiving region; and a contact film electrically connected to the first separation pattern, the contact film being provided in the substrate of the light-shielding region. A contact trench which extends from the first side is formed in the light-shielding region of the substrate and exposes the first separation pattern, and the contact film fills at least a part of the contact trench.
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公开(公告)号:US12046617B2
公开(公告)日:2024-07-23
申请号:US17387410
申请日:2021-07-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun-Ji Lee , Hyunchul Kim , Tae-Hun Lee
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/14689
Abstract: An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern.
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公开(公告)号:US09954940B2
公开(公告)日:2018-04-24
申请号:US14952261
申请日:2015-11-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoung-Heun Shin , Jae-Hyon Roh , Tae-Hun Lee
IPC: G06F15/173 , H04L29/08
CPC classification number: H04L67/101 , H04L67/1097
Abstract: A device for improving the use efficiency of a content delivery network (CDN) service and an operating method of a service distribution device are provided. The operating method includes receiving a service request signal from one or more electronic devices, determining an available domain for the service request signal based on the amount of idle traffic of one or more service domains in response to the reception of the service request signal, and transmitting a service response signal that includes the available domain information to the one or more electronic devices.
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公开(公告)号:US11881496B2
公开(公告)日:2024-01-23
申请号:US17246064
申请日:2021-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jameyung Kim , Tae-Hun Lee , Dongmo Im , Kwansik Cho
IPC: H01L31/112 , H01L27/146
CPC classification number: H01L27/1463 , H01L27/1462 , H01L27/1464 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14645 , H01L27/14689
Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.
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