Image sensor and method for fabricating the same

    公开(公告)号:US11810937B2

    公开(公告)日:2023-11-07

    申请号:US17342173

    申请日:2021-06-08

    Abstract: An image sensor is provided. The image sensor includes a substrate including a first side on which light is incident and a second side opposite the first side; a first separation pattern extending from the second side, the first separation pattern being interposed between unit pixels in the substrate of a light-receiving region and a light-shielding region provided around the light-receiving region; a second separation pattern extending from the first side and overlapping the first separation pattern, the second separation pattern being provided in the substrate of the light-receiving region; and a contact film electrically connected to the first separation pattern, the contact film being provided in the substrate of the light-shielding region. A contact trench which extends from the first side is formed in the light-shielding region of the substrate and exposes the first separation pattern, and the contact film fills at least a part of the contact trench.

    Image sensor and method of fabricating the same

    公开(公告)号:US12046617B2

    公开(公告)日:2024-07-23

    申请号:US17387410

    申请日:2021-07-28

    Abstract: An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern.

    Image sensor
    4.
    发明授权

    公开(公告)号:US11881496B2

    公开(公告)日:2024-01-23

    申请号:US17246064

    申请日:2021-04-30

    Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

Patent Agency Ranking