公开(公告)号：US20220157381A1

公开(公告)日：2022-05-19

申请号：US17483088

申请日：2021-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minseok KIM ,  Joonsuc JANG ,  Hyunggon KIM ,  Seonyong LEE

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/24 ,  G11C11/56

Abstract: A method of operating a memory device, the method including: performing a first program operation to form a plurality of first threshold voltage distributions; and performing a second program operation by using a coarse verification voltage and a fine verification voltage based on offset information to form a plurality of second threshold voltage distributions respectively corresponding to a plurality of program states from the plurality of first threshold voltage distributions, wherein the offset information includes a plurality of offsets that vary according to characteristics of the second threshold voltage distributions.