公开(公告)号：US20230253179A1

公开(公告)日：2023-08-10

申请号：US17935128

申请日：2022-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG MIN NAM ,  Jaeseung Jeong ,  Dongho Kim ,  Seunghune Yang

IPC: H01J37/28 ,  H01J37/22 ,  H01L21/66 ,  G01B11/02

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01L22/12 ,  G01B11/02 ,  H01J2237/2817 ,  H01J2237/223 ,  H01J2237/226 ,  G01B2210/56

Abstract: A pitch walk inspection method includes obtaining a scanning electron microscope (SEM) image for a line and space (L/S) pattern formed by a multi-patterning technology (MPT), where L/S pattern includes a plurality of lines and spaces that are alternately arranged; detecting a main pitch of the L/S pattern in the SEM image; dividing a graph of the main pitch into graphs of component pitches, based on the MPT; performing a Fast Fourier Transform (FFT) on each graph of the component pitches; multiplying a phase and an intensity graph of the FFT of each of the graphs of the component pitches with each other and obtaining compensated FFT phase graphs; and calculating a pitch walk for the L/S pattern by obtaining differences between phase peak values of the compensated FFT phase graphs.