公开(公告)号：US20210296321A1

公开(公告)日：2021-09-23

申请号：US17202465

申请日：2021-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： INKYOUNG HEO ,  HYO-SUB KIM ,  SOHYUN PARK ,  TAEJIN PARK ,  SEUNG-HEON LEE ,  YOUN-SEOK CHOI ,  SUNGHEE HAN ,  YOOSANG HWANG

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.

公开(公告)号：US20210167080A1

公开(公告)日：2021-06-03

申请号：US16913705

申请日：2020-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAE-JONG HAN ,  JAEKANG KOH ,  MUNJUN KIM ,  SU JONG KIM ,  SEUNG-HEON LEE

IPC: H01L27/11573 ,  H01L27/1158 ,  H01L27/11556 ,  H01L27/11529 ,  H01L23/528

Abstract: A three-dimensional semiconductor memory device is disclosed. The device may include a substrate including a cell array region and a connection region provided at an end portion of the cell array region, an electrode structure extending from the cell array region to the connection region, the electrode structure including electrodes sequentially stacked on the substrate, an upper insulating layer provided on the electrode structure, a first horizontal insulating layer provided in the upper insulating layer and extending along the electrodes, and first contact plugs provided on the connection region to penetrate the upper insulating layer and the first horizontal insulating layer. The first horizontal insulating layer may include a material having a better etch-resistive property than the upper insulating layer.

公开(公告)号：US20190096673A1

公开(公告)日：2019-03-28

申请号：US16052063

申请日：2018-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG-HEON LEE ,  Koung-Min RYU ,  Kyung-Seok OH ,  Sang-Jin HYUN

IPC: H01L21/033 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/24

Abstract: Disclosed are an apparatus for forming a layer and a method of forming the layer using the same. The apparatus includes a transfer chamber in which a substrate is transferred, a deposition chamber positioned at a side of the transfer chamber and performing a deposition process on the substrate to thereby form the layer on the substrate, and at least a de-hydrogen chamber positioned at another side of the transfer chamber and performing a de-hydrogen process on the layer on the substrate to reduce a hydrogen concentration in the layer. Accordingly, the de-hydrogen process is performed in the apparatus without unloading of the substrate from the apparatus.