公开(公告)号：US20180158773A1

公开(公告)日：2018-06-07

申请号：US15638552

申请日：2017-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： AUGUSTIN JINWOO HONG ,  DAE-IK KIM ,  CHAN-SIC YOON ,  Kl-SEOK LEE ,  DONG-MIN HAN ,  SUNG-HO JANG ,  YOO-SANG HWANG ,  BONG-SOO KIM ,  JE-MIN PARK

IPC: H01L23/522 ,  H01L27/11568 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/11568

Abstract: A semiconductor device includes a substrate including a cell array region including a cell active region. An insulating pattern is on the substrate. The insulating pattern includes a direct contact hole which exposes the cell active region and extends into the cell active region. A direct contact conductive pattern is in the direct contact hole and is connected to the cell active region. A bit line is on the insulating pattern. The bit line is connected to the direct contact conductive pattern and extends in a direction orthogonal to an upper surface of the insulating pattern. The insulating pattern includes a first insulating pattern including a non-metal-based dielectric material and a second insulating pattern on the first insulating pattern. The second insulating pattern includes a metal-based dielectric material having a higher dielectric constant than a dielectric constant of the first insulating pattern.