公开(公告)号：US20240178202A1

公开(公告)日：2024-05-30

申请号：US18356035

申请日：2023-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeongchan KIM ,  Un-Byoung KANG ,  Jumyong PARK ,  Dongjoon OH ,  Jun Young OH ,  Jeongil LEE ,  Chungsun LEE

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L25/105 ,  H01L23/49822 ,  H01L24/08 ,  H01L24/09 ,  H01L24/80 ,  H10B80/00

Abstract: A semiconductor device includes: a semiconductor layer including a wire and an electrical element; and a plurality of metal pads on a surface of the semiconductor layer, wherein the plurality of metal pads includes a first metal pad and a second metal pad, wherein the second metal pad is smaller in surface area or diameter on the surface of the semiconductor layer than the first metal pad, and wherein the second metal pad is between a first region of the surface of the semiconductor layer where the first metal pad is and a second region of the surface of the semiconductor layer where a surface metal density is zero (0).