公开(公告)号：US20230170372A1

公开(公告)日：2023-06-01

申请号：US17952479

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeon NOH ,  KOOK TAE KIM ,  JINGYUN KIM ,  MISEON PARK ,  JAEWOONG LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14629 ,  H01L27/14627 ,  H01L27/14621 ,  H01L27/14636

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a. plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US20230170370A1

公开(公告)日：2023-06-01

申请号：US17933747

申请日：2022-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MISEON PARK ,  JAEWOONG LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683

Abstract: An image sensor includes a substrate that includes a trench that defines pixel regions and a deep isolation pattern provided between the pixel regions and in the trench. The deep isolation pattern includes first and second insulating liner patterns disposed on first and second inner side surfaces of the trench, first and second lower insulating patterns disposed on lower inner side surfaces of the first and second insulating liner patterns and an isolation pattern provided between the first and second lower insulating patterns and that extends through the substrate. The deep isolation pattern further includes a first air gap region that is a space enclosed by the first insulating liner pattern, the first lower insulating pattern, and the isolation pattern, and a second air gap region that is a space between the second insulating liner pattern, the second lower insulating pattern, and the isolation pattern.

公开(公告)号：US20230170371A1

公开(公告)日：2023-06-01

申请号：US17950214

申请日：2022-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWOONG LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor including: a substrate having a first surface and a second surface, which are opposite to each other, and pixel regions; and a deep isolation pattern extended from the first surface into the substrate and between the pixel regions, wherein the deep isolation pattern includes a semiconductor pattern penetrating the substrate and an insulating pattern between the substrate and the semiconductor pattern, the insulating pattern includes a side portion on a side surface of the semiconductor pattern and a bottom portion on a bottom surface of the semiconductor pattern, the bottom portion of the insulating pattern has a first thickness, the side portion of the insulating pattern has a second thickness, and the first thickness is larger than the second thickness.

公开(公告)号：US20220013566A1

公开(公告)日：2022-01-13

申请号：US17182364

申请日：2021-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KOOK TAE KIM ,  JU-EUN KIM ,  MISEON PARK ,  JAEWOONG LEE ,  SOOJIN HONG

IPC: H01L27/146

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.