公开(公告)号：US20250151266A1

公开(公告)日：2025-05-08

申请号：US18781217

申请日：2024-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojoon An ,  Seungkwon Lee

IPC: H10B20/25

Abstract: An integrated circuit includes a one-time programmable (OTP) bit cell including a program transistor and a read transistor arranged on an active region extending on a front side of a substrate in a first direction, a first backside gate contact penetrating the substrate in a vertical direction and overlapped by the active region, a backside wiring layer arranged on a backside of the substrate and connected to a first gate of the program transistor via the first backside gate contact to transfer a program word line signal to the first gate, and a front side wiring layer arranged above the front side of the substrate and including a first front side wiring pattern connected to a second gate of the read transistor to transfer a read word line signal to the second gate.

公开(公告)号：US20250070019A1

公开(公告)日：2025-02-27

申请号：US18753168

申请日：2024-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjeung Kang ,  Hyojoon An

IPC: H01L23/525 ,  G11C17/16 ,  G11C17/18 ,  H01L23/528

Abstract: An integrated circuit includes a first backside wiring layer arranged on a backside of a substrate, and an e-fuse bit cell. The e-fuse bit cell includes an e-fuse, a transistor arranged on a front side of the substrate, and a first backside contact passing through the substrate in a vertical direction and electrically connecting the e-fuse to the transistor. The e-fuse includes a first terminal electrically connected to a bit line, a second terminal electrically connected to the first backside contact, and a link between the first terminal and the second terminal, and the first terminal, the second terminal, and the link are included in the first backside wiring layer.