公开(公告)号：US20130313514A1

公开(公告)日：2013-11-28

申请号：US13842812

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Geon Wook YOO ,  Nam Goo CHA ,  Jae Hyeok HEO ,  Han Kyu SEONG ,  Hun Jae CHUNG

IPC: H01L33/16

CPC classification number: H01L33/16 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y99/00 ,  H01L33/08 ,  H01L33/24 ,  H01L33/38 ,  H01L33/405 ,  Y10S977/762

Abstract: There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件，包括：衬底和在衬底上彼此间隔开的纳米结构。 纳米结构包括第一导电型半导体层芯，有源层和第二导电型半导体层。 填料填充纳米结构之间的空间并形成为低于多个纳米结构。 形成电极以覆盖纳米结构的上部和纳米结构的侧表面的部分并电连接到第二导电型半导体层。

公开(公告)号：US20160064607A1

公开(公告)日：2016-03-03

申请号：US14698717

申请日：2015-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Sung Hyun SIM ,  Dong Kuk LEE ,  Hye Seok NOH

IPC: H01L33/24 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: A nanostructure semiconductor light emitting device may include: a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of nanocores disposed on the exposed portions of the base layer and formed of a first conductivity-type semiconductor material, each of which including a tip portion having a crystal plane different from that of a side surface thereof; a first high resistance layer disposed on the tip portion of the nanocore and formed of an oxide containing an element which is the same as at least one of elements constituting the nanocore; an active layer disposed on the first high resistance layer and the side surface of the nanocore; and a second conductivity-type semiconductor layer disposed on the active layer.

Abstract translation: 纳米结构半导体发光器件可以包括：由第一导电型半导体材料形成的基极层; 绝缘层，其设置在所述基底层上并且具有暴露所述基底层的部分的多个开口; 多个纳米孔，其设置在所述基底层的所述露出部分上并由第一导电型半导体材料形成，所述第一导电型半导体材料包括具有不同于其侧表面的晶面的尖端部分; 第一高电阻层，设置在纳米孔的尖端部分上，由含有与构成纳米孔的元素中至少一个元素相同的元素的氧化物形成; 设置在所述第一高电阻层和所述纳米孔的侧表面上的有源层; 以及设置在有源层上的第二导电型半导体层。

公开(公告)号：US20140209859A1

公开(公告)日：2014-07-31

申请号：US14165112

申请日：2014-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Geon Wook YOO ,  Han Kyu SEONG

IPC: H01L33/04 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.

Abstract translation: 一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基极层。 在基底层上形成包括蚀刻停止层的掩模。 在掩模中形成多个开口以暴露其中的区域。 通过在基底层的曝光区域上生长第一导电型半导体以填充多个开口来形成多个纳米孔。 通过使用蚀刻停止层来部分地去除掩模以暴露多个纳米孔的侧面部分。 在多个纳米孔的表面上依次生长有源层和第二导电型半导体层。

公开(公告)号：US20160049553A1

公开(公告)日：2016-02-18

申请号：US14828004

申请日：2015-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun SIM ,  Geon Wook YOO ,  Mi Hyun KIM ,  Dong Hoon LEE ,  Jin Bock LEE ,  Je Won KIM ,  Hye Seok NOH ,  Dong Kuk LEE

IPC: H01L33/24 ,  H01L33/14 ,  H01L33/08

CPC classification number: H01L33/24 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/38

Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

Abstract translation: 纳米结构半导体发光器件可以包括：具有第一和第二区域并由第一导电型半导体材料形成的基极层; 多个发光纳米结构，其设置在所述基底层的上表面上，每一个包括由所述第一导电型半导体材料形成的纳米孔，以及依次设置在所述纳米孔上的有源层和第二导电型半导体层; 以及设置在所述多个发光纳米结构上的接触电极，其中设置在所述第一区域上的每个发光纳米结构的末端部分可以不被所述接触电极覆盖，并且每个所述发光纳米结构的顶端部分设置在所述第一区域上 第二区域可以被接触电极覆盖。

公开(公告)号：US20150155432A1

公开(公告)日：2015-06-04

申请号：US14455853

申请日：2014-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Jae Hyeok HEO ,  Sam Mook KANG ,  Han Kyu SEONG

IPC: H01L33/04 ,  H01L33/64 ,  H01L33/08

CPC classification number: H01L33/04 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/64

Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.

Abstract translation: 纳米结构半导体发光器件可以包括包括多个发光纳米结构的衬底，其包括依次形成在纳米孔上的包括第一导电类型半导体，有源层和第二导电类型半导体层的纳米孔。 发光区域可以包括第一区域和第二区域。 设置在第一区域中的发光纳米结构之间的间隔可以不同于设置在第二区域中的发光纳米结构之间的间隔。 第一区域可以比第二区域更靠近非发光区域，并且可以在发光纳米结构之间具有比第二区域更小的间隔。 还公开了实施这种纳米结构半导体发光器件的系统和制造方法。

公开(公告)号：US20150280062A1

公开(公告)日：2015-10-01

申请号：US14605551

申请日：2015-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Kyung Wook HWANG ,  Yong Min KIM ,  Sung Hyun SIM

IPC: H01L33/18 ,  H01L33/14 ,  H01L33/00 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44 ,  H01L33/52 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层，多个发光纳米结构和接触电极。 基层由第一导电型半导体材料形成。 绝缘层设置在基底层上。 每个发光纳米结构设置在基层中的多个开口的相应开口中，并且包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在第一导电类型半导体材料上的有源层和第二导电类型半导体层 纳米孔的表面。 接触电极与绝缘层隔开并设置在第二导电型半导体层的一部分上。 发光纳米结构的尖端部分具有与发光纳米结构的侧表面不同的晶面。

公开(公告)号：US20140246647A1

公开(公告)日：2014-09-04

申请号：US14165168

申请日：2014-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Dong Ho KIM ,  Geon Wook YOO

IPC: H01L33/06 ,  H01L27/15 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.

Abstract translation: 纳米结构半导体发光器件包括基极层，绝缘层和多个发光纳米结构。 基极层包括第一导电型半导体。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 发光纳米结构分别设置在基层的露出区域上，并且包括多个具有第一导电型半导体的纳米孔，并具有设置为相同晶面的侧面。 发光纳米结构包括依次设置在纳米孔表面上的有源层和第二导电类型半导体层。 纳米孔的上表面被提供为发光纳米结构的上表面的部分，并且发光纳米结构的上表面彼此基本上是平面的。