公开(公告)号：US20250166670A1

公开(公告)日：2025-05-22

申请号：US18749743

申请日：2024-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehyeon JO ,  Kyungduk LEE ,  Youn-Soo CHEON

IPC: G11C7/02 ,  G11C7/10

Abstract: A non-volatile memory device, a storage device including the non-volatile memory device, and an operating method of the storage device are provided. The non-volatile memory device comprises a data pin configured to output a data signal, and a command address pin being separate from the data pi the command address pin configured to receive a read command corresponding to the data signal and output a noise state data during a data output operation in which the data signal is output through the data pin in response to the read command.

公开(公告)号：US20250165164A1

公开(公告)日：2025-05-22

申请号：US19029632

申请日：2025-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduk LEE ,  Youn-Soo CHEON ,  Daehyeon JO

IPC: G06F3/06

Abstract: Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.

公开(公告)号：US20230400992A1

公开(公告)日：2023-12-14

申请号：US18101232

申请日：2023-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduk LEE ,  Youn-Soo CHEON ,  Daehyeon JO

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F3/0659 ,  G06F3/0673 ,  G06F3/0634

Abstract: Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.