公开(公告)号：US20200090944A1

公开(公告)日：2020-03-19

申请号：US16375092

申请日：2019-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Jun LEE ,  Da-Hye SHIN ,  Yil-Hyung LEE

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768

Abstract: A semiconductor device includes a conductive structure on a substrate, an etch stop layer on the conductive structure, an insulation layer on the etch stop layer, and a contact plug extending through the etch stop layer and the insulation layer and contacting the conductive structure. The contact plug may include first and second conductive pattern structures sequentially stacked and contacting with each other. A width of an upper surface of the first conductive pattern structure may be greater than that of a lower surface of the second conductive pattern structure. At least an upper portion of the first conductive pattern structure may have a sidewall not perpendicular but inclined to an upper surface of the substrate.