公开(公告)号：US20140061631A1

公开(公告)日：2014-03-06

申请号：US13826905

申请日：2013-03-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Je Hun LEE ,  Jin Hun LIM ,  Jun Ho SONG

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

Abstract: A thin film transistor and a manufacturing method thereof. The thin film transistor includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first semiconductor disposed on the gate insulating layer; a second semiconductor disposed on the first semiconductor and having a different plane shape from the first semiconductor; and a source electrode and a drain electrode that are disposed on the second semiconductor and face each other.

Abstract translation: 一种薄膜晶体管及其制造方法。 薄膜晶体管包括：栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的第一半导体; 设置在所述第一半导体上并且具有与所述第一半导体不同的平面形状的第二半导体; 以及设置在第二半导体上并且彼此面对的源电极和漏电极。