公开(公告)号：US20150380480A1

公开(公告)日：2015-12-31

申请号：US14747891

申请日：2015-06-23

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ken OZAWA ,  Hiroyuki KUNISHIMA

IPC: H01L49/02 ,  H01L23/522 ,  H01L27/108 ,  H01L27/06

CPC classification number: H01L27/10814 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/53295 ,  H01L27/0629 ,  H01L27/10855 ,  H01L28/87 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm2], the following expression (1) is satisfied. C/A≦1.98 [nF/μm2]  (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.

Abstract translation: 一种具有电容器的半导体器件，包括电耦合到晶体管的第一电极和与第一电极分离并被层间绝缘膜覆盖的第二电极，其中在层间绝缘膜中形成多个耦合孔，并且位于 在下端与第二电极接触; 并且当第二电极的电容由C [nF]表示，并且耦合孔的下端的总面积由A [μm2]表示时，满足以下表达式（1）。 C / A＆nlE; 1.98 [nF /μm2]（1）抑制了在耦合孔的下端构成电容器的第二电极的溶出。