公开(公告)号：US09515448B2

公开(公告)日：2016-12-06

申请号：US13627633

申请日：2012-09-26

Applicant: Raytheon Company

Inventor： Robert D. Stultz ,  Juan Carlos Sotelo ,  David M. Filgas

IPC: H01S3/06 ,  H01S3/08 ,  H01S3/113 ,  H01S3/16 ,  H01S3/0941

CPC classification number: H01S3/0627 ,  H01S3/0612 ,  H01S3/0621 ,  H01S3/08036 ,  H01S3/09415 ,  H01S3/113 ,  H01S3/1618 ,  H01S3/1643

Abstract: A microchip laser includes a microchip laser base comprising a gain region and a passive Q-switch region. The microchip laser also includes a solid etalon coupled to the microchip laser base, and an interfacial coating disposed between the microchip laser base and the solid etalon. In some embodiments, the microchip laser further includes a dichroic coating disposed on a surface of the microchip laser base opposite the interfacial coating.

Abstract translation: 微芯片激光器包括包括增益区域和无源Q开关区域的微芯片激光器基座。 微芯片激光器还包括耦合到微芯片激光器基座的固体标准具和设置在微芯片激光基座和固体标准具之间的界面涂层。 在一些实施例中，微芯片激光器还包括设置在与界面涂层相对的微芯片激光器基底的表面上的二向色涂层。

公开(公告)号：US20140086268A1

公开(公告)日：2014-03-27

申请号：US13627633

申请日：2012-09-26

Applicant: RAYTHEON COMPANY

Inventor： Robert D. Stultz ,  Juan Carlos Sotelo ,  David M. Filgas

IPC: H01S3/11

CPC classification number: H01S3/0627 ,  H01S3/0612 ,  H01S3/0621 ,  H01S3/08036 ,  H01S3/09415 ,  H01S3/113 ,  H01S3/1618 ,  H01S3/1643

Abstract: A microchip laser includes a microchip laser base comprising a gain region and a passive Q-switch region. The microchip laser also includes a solid etalon coupled to the microchip laser base, and an interfacial coating disposed between the microchip laser base and the solid etalon. In some embodiments, the microchip laser further includes a dichroic coating disposed on a surface of the microchip laser base opposite the interfacial coating.

Abstract translation: 微芯片激光器包括包括增益区域和无源Q开关区域的微芯片激光器基座。 微芯片激光器还包括耦合到微芯片激光器基座的固体标准具和设置在微芯片激光基座和固体标准具之间的界面涂层。 在一些实施例中，微芯片激光器还包括设置在与界面涂层相对的微芯片激光器基底的表面上的二向色涂层。