公开(公告)号：US10032763B2

公开(公告)日：2018-07-24

申请号：US15171987

申请日：2016-06-02

Applicant: QUALCOMM Incorporated

Inventor： Albert Kumar ,  Hai Dang ,  Sreeker Dundigal ,  Vasisht Vadi

IPC: H03K3/01 ,  H01L27/02 ,  H01L27/06 ,  H01L29/94 ,  H01L29/786 ,  H01L29/10

Abstract: In an aspect of the disclosure, a MOS device for using bulk cross-coupled thin-oxide decoupling capacitor is provided. The MOS device may include a pMOS transistor and an nMOS transistor. The MOS device may include a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The first set of transistor body connections may couple a first voltage source to the pMOS transistor body. The first set of transistor body connections may further couple a second voltage source to the nMOS transistor body. The MOS device may include a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The second set of transistor body connections may couple the nMOS transistor gate to the pMOS transistor body. The second set of transistor body connections may further couple the pMOS transistor gate to the nMOS transistor body.