-
公开(公告)号：US10129495B2
公开(公告)日：2018-11-13
申请号：US15081642
申请日：2016-03-25
Applicant: QUALCOMM Incorporated
Inventor： Zhengming Fu , Shan Lu , Jing Ling
Abstract: Techniques for direct local binary pattern (LBP) generation are presented. An image sensor for LBP generation includes a variable reference signal generator and a sensor pixel array that can generate events based on optical signals on the sensor pixel array and a reference level from the variable reference signal generator. The image sensor also includes an address encoder that can encode the addresses of the sensor pixels that generate events, and a binary image generator that can create a binary image based on the addresses of the sensor pixels that generate the events at the reference level. The image sensor may also include a local binary pattern generator configured to determine local binary pattern labels for image pixels whose binary value changes from a first binary image at a first reference level to a subsequent second binary image at a next reference level.
-
公开(公告)号：US20180034452A1
公开(公告)日：2018-02-01
申请号：US15271007
申请日：2016-09-20
Applicant: QUALCOMM Incorporated
CPC classification number: H03K5/1565 , G01R31/31725 , H03K3/0315 , H03K21/026
Abstract: Methods and systems for independently tracking NMOS device process variation and PMOS device process variation are described herein. In one embodiment, a method for tracking process variation includes measuring a frequency of an NMOS-based ring oscillator on a chip, and determining a threshold voltage or switching speed for NMOS transistors on the chip based on the measured frequency of the NMOS-based ring oscillator. The method also includes measuring a frequency of a PMOS-based ring oscillator on the chip, and determining a threshold voltage or switching speed for PMOS transistors on the chip based on the measured frequency of the PMOS-based ring oscillator.
-
Search Results
2
records
(took 0.012 seconds)
