公开(公告)号：US20190195700A1

公开(公告)日：2019-06-27

申请号：US16268669

申请日：2019-02-06

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Periannan Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  H01L23/522 ,  H01L23/34 ,  G01K7/18 ,  H01L49/02 ,  G01K7/24 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/528 ,  H01L21/66

CPC classification number: G01K7/01 ,  G01K7/186 ,  G01K7/24 ,  H01L21/32139 ,  H01L21/76895 ,  H01L22/34 ,  H01L23/34 ,  H01L23/5228 ,  H01L23/528 ,  H01L27/0629 ,  H01L28/24

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

公开(公告)号：US20180058943A1

公开(公告)日：2018-03-01

申请号：US15246006

申请日：2016-08-24

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Chidi Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  H01L21/66 ,  H01L49/02 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/768 ,  G01K7/24

CPC classification number: G01K7/01 ,  G01K7/186 ,  G01K7/24 ,  H01L21/32139 ,  H01L21/76895 ,  H01L22/34 ,  H01L23/34 ,  H01L23/5228 ,  H01L23/528 ,  H01L27/0629 ,  H01L28/24

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

公开(公告)号：US10247617B2

公开(公告)日：2019-04-02

申请号：US15246006

申请日：2016-08-24

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Periannan Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  G01K7/24 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/66 ,  H01L23/528 ,  H01L49/02 ,  G01K7/18 ,  H01L23/34 ,  H01L23/522 ,  H01L27/06

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.