公开(公告)号：US20140344513A1

公开(公告)日：2014-11-20

申请号：US13893670

申请日：2013-05-14

Applicant: QUALCOMM Incorporated

Inventor： Haw-Jing LO ,  Dexter CHUN

IPC: G11C11/406

CPC classification number: G11C11/40622 ,  G11C7/04 ,  G11C11/40603 ,  G11C11/40611 ,  G11C11/40626 ,  G11C11/4072

Abstract: Methods and devices for refreshing a dynamic memory device, (e.g., DRAM) to eliminate unnecessary page refresh operations. A value in a lookup table for the page may indicate whether valid data including all zeros is present in the page. When the page includes valid data of all zeros, the lookup table value may be set so that refresh, memory read, write and clear accesses of the page may be inhibited and a valid value may be returned. A second lookup table may contain a second value indicating whether a page has been accessed by a page read or write during the page refresh interval. A page refresh, by issuing an ACT−PRE command pair, and a page address may be performed according to the page refresh interval when the second value indicates that page access has not occurred.

Abstract translation: 用于刷新动态存储设备（例如，DRAM）以消除不必要的页面刷新操作的方法和设备。 该页面的查找表中的值可以指示页面中是否存在包括全部零的有效数据。 当页面包括全零的有效数据时，可以设置查找表值，使得可以禁止页面的刷新，存储器读取，写入和清除访问，并且可以返回有效值。 第二查找表可以包含指示在页面刷新间隔期间页面是否被页面读取或写入访问的第二值。 当第二个值指示没有发生页面访问时，可以根据页面刷新间隔来执行通过发出ACT-PRE命令对的页面刷新和页面地址。

公开(公告)号：US20150127972A1

公开(公告)日：2015-05-07

申请号：US14070480

申请日：2013-11-01

Applicant: QUALCOMM Incorporated

Inventor： Dexter CHUN ,  Jung Pill KIM ,  Seung KANG ,  Taehyun KIM

IPC: G06F11/10

CPC classification number: G06F11/1008 ,  G06F11/076 ,  G06F11/0766 ,  G06F11/1048 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7204 ,  G06F2212/7209

Abstract: A memory module comprising a non-volatile cell array and a re-mapper. A page map table is stored in the non-volatile cell array, and includes mappings of old page addresses to new page addresses. The re-mapper is configured to direct memory operations referencing an old page address to the new page address that the old page address is mapped to. The mappings are created when a memory cell is determined to be in a failure state.

Abstract translation: 一种包括非易失性单元阵列和重新映射器的存储器模块。 页面映射表存储在非易失性单元阵列中，并且包括旧页地址到新页地址的映射。 重映射器被配置为将引用旧页地址的内存操作定向到旧页地址被映射到的新页地址。 当确定存储器单元处于故障状态时，创建映射。

公开(公告)号：US20150143198A1

公开(公告)日：2015-05-21

申请号：US14081645

申请日：2013-11-15

Applicant: QUALCOMM Incorporated

Inventor： Dexter CHUN ,  Jung Pill KIM ,  Hyunsuk SHIN ,  Jungwon SUH

IPC: G06F11/10 ,  G11C29/00

CPC classification number: G06F11/1072 ,  G06F11/1048 ,  G06F11/14 ,  G11C29/765

Abstract: A system for replacing a page stored in system memory when reading the page incurs a multiple-bit error. Upon reading a page in system memory for which a multiple-bit error is detected, backup data in flash memory is loaded into a redundant page in the system memory, and a re-mapper is configured so that future accesses to the page are redirected to the redundant page.

Abstract translation: 当读取页面时，用于替换存储在系统存储器中的页面的系统产生多位错误。 在读取检测到多位错误的系统存储器中的页面时，闪存中的备份数据被加载到系统存储器中的冗余页面中，并且配置重新映射器，以便将来对页面的访问被重定向到 冗余页面。