公开(公告)号：US10059590B2

公开(公告)日：2018-08-28

申请号：US14847176

申请日：2015-09-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke Mori ,  Mamoru Imade ,  Tomio Yamashita ,  Ryo Kuwabara ,  Yoshio Okayama

IPC: C01B21/06

CPC classification number: C01B21/0632

Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.