公开(公告)号：US20160181461A1

公开(公告)日：2016-06-23

申请号：US15054129

申请日：2016-02-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tomonori UEYAMA ,  Motohide KAI ,  Masaki SHIMA

IPC: H01L31/18 ,  H01L31/0376

CPC classification number: H01L31/1804 ,  H01L31/03762 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/186 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract translation: 提供一种具有改进的输出特性的太阳能电池的制造方法。 在第一和第二半导体层（11,13）中的至少一个上执行其中不使用离子的氢自由基处理。

公开(公告)号：US20180013021A1

公开(公告)日：2018-01-11

申请号：US15706605

申请日：2017-09-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Motohide KAI

IPC: H01L31/0376 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/20 ,  H01L31/0747

CPC classification number: H01L31/03762 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A solar cell includes: a semiconductor substrate formed of n-type crystalline silicon; a first stack formed of amorphous silicon in a first region on a first principle surface of the semiconductor substrate; a second stack formed of amorphous silicon in a second region different from the first region on the first principle surface; and a third stack formed of amorphous silicon on a second principle surface of the semiconductor substrate opposite from the first principle surface. The second stack has an oxygen concentration that is higher than that of the first stack.

公开(公告)号：US20150349146A1

公开(公告)日：2015-12-03

申请号：US14724992

申请日：2015-05-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshinari ICHIHASHI ,  Motohide KAI

IPC: H01L31/0216 ,  H01L31/075

CPC classification number: H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/50

Abstract: A semiconductor substrate of any one of a first conductivity type and a second conductivity type includes a first main surface and a second main surface. A first semiconductor layer of the first conductivity type is provided on the first main surface. A second semiconductor layer of the second conductivity type is provided on the first main surface. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. An insulating layer comprises silicon nitride and is arranged between the first semiconductor layer and the second semiconductor layer in an overlap region where the second semiconductor layer is provided above the first semiconductor layer. An anti-diffusion film is arranged between the insulating layer and the first semiconductor layer and is configured to prevent nitrogen from diffusing from the insulating layer into the first semiconductor layer.

Abstract translation: 第一导电类型和第二导电类型中的任一种的半导体衬底包括第一主表面和第二主表面。 第一导电类型的第一半导体层设置在第一主表面上。 第二导电类型的第二半导体层设置在第一主表面上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。 绝缘层包括氮化硅，并且在第一半导体层设置在第一半导体层之上的重叠区域中布置在第一半导体层和第二半导体层之间。 在绝缘层和第一半导体层之间设置防扩散膜，并且防止氮从绝缘层扩散到第一半导体层中。