公开(公告)号：US20240099136A1

公开(公告)日：2024-03-21

申请号：US18470288

申请日：2023-09-19

Applicant: POSTECH Research and Business Development Foundation

Inventor： Byoung Hun LEE ,  Hyeon Jun HWANG

IPC: H10N10/01 ,  H10N10/855

CPC classification number: H10N10/01 ,  H10N10/855

Abstract: Disclosed herein are a method for manufacturing a graphene thermoelectric device and a graphene thermoelectric device manufactured thereby. The method for manufacturing a graphene thermoelectric device includes: forming a graphene channel layer on a substrate; forming a thermoelectric structure by depositing a first electrode and a second electrode on both ends of the graphene channel layer; and doping the graphene channel layer by dipping the thermoelectric structure into a doping solution.