公开(公告)号：US09666631B2

公开(公告)日：2017-05-30

申请号：US14280880

申请日：2014-05-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/14641 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14647 ,  H04N5/37457

Abstract: An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The second microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode.

公开(公告)号：US09711546B2

公开(公告)日：2017-07-18

申请号：US15059182

申请日：2016-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L31/068 ,  H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.

公开(公告)号：US09608019B2

公开(公告)日：2017-03-28

申请号：US15059196

申请日：2016-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.

公开(公告)号：US09324759B2

公开(公告)日：2016-04-26

申请号：US14135066

申请日：2013-12-19

Applicant: OmniVision Technologies, Inc.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L31/103 ,  H01L31/107 ,  H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管和第二光电二极管。 第一光电二极管包括第一掺杂区域，第一轻掺杂区域和设置在第一掺杂区域和第一轻掺杂区域之间的第一高掺杂区域。 第二光电二极管具有基本上等于第一光电二极管的第一全阱容量的第二满阱容量。 第二光电二极管包括第二掺杂区域，第二轻掺杂区域和设置在第二掺杂区域和第二轻掺杂区域之间的第二高掺杂区域。 第一光电二极管可用于测量低光，第二光电二极管可用于测量亮光。

公开(公告)号：US20160181297A1

公开(公告)日：2016-06-23

申请号：US15059196

申请日：2016-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管和第二光电二极管。 第一光电二极管包括第一掺杂区域，第一轻掺杂区域和设置在第一掺杂区域和第一轻掺杂区域之间的第一高掺杂区域。 设置在其中的第二光电二极管的第二全阱容量基本上等于第一光电二极管的第一全阱容量。 第二光电二极管包括第二掺杂区域，第二轻掺杂区域和设置在第二掺杂区域和第二轻掺杂区域之间的第二高掺杂区域。 第一光圈分光器设置在第二光电二极管的上方，以将由第二光电二极管接收的图像光限制为小于由第一光电二极管接收的第一数量的图像光的第二量。

公开(公告)号：US20150333099A1

公开(公告)日：2015-11-19

申请号：US14280880

申请日：2014-05-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14647 ,  H04N5/37457

Abstract: An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The first microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode.

Abstract translation: 图像传感器像素包括第一光电二极管，第二光电二极管，第一微透镜，第二微透镜和滤光器。 第一和第二光电二极管彼此相邻设置在半导体材料中。 第一光电二极管具有基本上等于第二光电二极管的第二满阱容量的第一全阱容量。 第一微透镜设置在第一光电二极管的上方，第二微透镜设置在第二光电二极管的上方。 第一微透镜基本上与第一微透镜相同。 滤光器设置在第二微透镜和第二光电二极管之间以减小入射在第二光电二极管上的图像光的强度。 滤光器基本上不影响朝向第一光电二极管的图像光。

公开(公告)号：US09160958B2

公开(公告)日：2015-10-13

申请号：US14133127

申请日：2013-12-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Jeong-Ho Lyu

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14641 ,  H04N5/3559 ,  H04N5/3598 ,  H04N5/37455 ,  H04N5/37457

Abstract: An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.

Abstract translation: 图像传感器包括光敏区域，传输晶体管和一个或多个共用电荷 - 电压机构。 读出图像传感器的方法包括：使第一传输晶体管能够将光电荷从第一光敏区域转移到共享的电荷 - 电压机构。 该方法还包括不超过部分地允许第二传输晶体管部分地接通第二传输晶体管以增加共享的电荷 - 电压机构的电容，同时光电荷从第一感光区域传送到共享的 充电电压机制。

公开(公告)号：US20150179695A1

公开(公告)日：2015-06-25

申请号：US14135066

申请日：2013-12-19

Applicant: OmniVision Technologies, Inc.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管和第二光电二极管。 第一光电二极管包括第一掺杂区域，第一轻掺杂区域和设置在第一掺杂区域和第一轻掺杂区域之间的第一高掺杂区域。 设置在其中的第二光电二极管的第二全阱容量基本上等于第一光电二极管的第一全阱容量。 第二光电二极管包括第二掺杂区域，第二轻掺杂区域和设置在第二掺杂区域和第二轻掺杂区域之间的第二高掺杂区域。 第一光电二极管可用于测量低光，第二光电二极管可用于测量亮光。

公开(公告)号：US20150172579A1

公开(公告)日：2015-06-18

申请号：US14133127

申请日：2013-12-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Jeong-Ho Lyu

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H01L27/14641 ,  H04N5/3559 ,  H04N5/3598 ,  H04N5/37455 ,  H04N5/37457

Abstract: An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.

Abstract translation: 图像传感器包括光敏区域，传输晶体管和一个或多个共用电荷 - 电压机构。 读出图像传感器的方法包括：使第一传输晶体管能够将光电荷从第一光敏区域转移到共享的电荷 - 电压机构。 该方法还包括不超过部分地允许第二传输晶体管部分地接通第二传输晶体管以增加共享的电荷 - 电压机构的电容，同时光电荷从第一感光区域传送到共享的 充电电压机制。

公开(公告)号：US10134788B2

公开(公告)日：2018-11-20

申请号：US14029515

申请日：2013-09-17

Applicant: OmniVision Technologies, Inc.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L31/00 ,  H01L27/146 ,  H04N5/355 ,  H04N5/3745

Abstract: A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.