公开(公告)号：US11093840B2

公开(公告)日：2021-08-17

申请号：US16973092

申请日：2019-06-14

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Eitan Rothstein ,  Ilya Rubinovich ,  Noam Tal ,  Barak Bringoltz ,  Yongha Kim ,  Ariel Broitman ,  Oded Cohen ,  Eylon Rabinovich ,  Tal Zaharoni ,  Shay Yogev ,  Daniel Kandel

IPC: G06N5/04 ,  H01L21/66 ,  G01B11/06 ,  G06N20/00 ,  G03F7/20 ,  H01L21/68

Abstract: A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.

公开(公告)号：US10916404B2

公开(公告)日：2021-02-09

申请号：US16488974

申请日：2018-02-27

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Vladimir Machavariani ,  Michael Shifrin ,  Daniel Kandel ,  Victor Kucherov ,  Igor Ziselman ,  Ronen Urenski ,  Matthew Sendelbach

IPC: H01J37/26 ,  G06T7/00 ,  G06T7/60 ,  H01J37/22

Abstract: A control system is presented for use in measuring one or more parameters of a three-dimensional patterned structure. The control system is configured as a computer system comprising a data processor configured to receive and process raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize data indicative of one or more parameters of TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and a predetermined simulated TEM image data, TEMsimui based on a parametrized three-dimensional model of features of the patterned structure, and generate simulated image data corresponding to a best fit condition, to thereby enable determination therefrom of the one or more parameters of the structure.