公开(公告)号：US20160020199A1

公开(公告)日：2016-01-21

申请号：US14331233

申请日：2014-07-15

Applicant: Mediatek Inc.

Inventor： Chih-Hsin Fu ,  Yu-Tung Chang

IPC: H01L27/02 ,  H01L23/528

CPC classification number: H03K19/0016 ,  H01L27/0207 ,  H01L27/11807 ,  H03K19/1735

Abstract: A semiconductor structure includes a first spare cell region, a first conductive line and a second conductive line. The first spare cell region has a plurality of spare cells. The first conductive line is coupled between a first reference voltage and the plurality of spare cells, and is arranged for providing the first reference voltage to the plurality of spare cells of the first spare cell region. The second conductive line is coupled to a plurality of spare cells, and is arranged for providing a second reference voltage to the plurality of spare cells of the first spare cell region.

Abstract translation: 半导体结构包括第一备用单元区域，第一导电线路和第二导电线路。 第一备用单元区域具有多个备用单元。 第一导线耦合在第一参考电压和多个备用单元之间，并且被布置为将第一参考电压提供给第一备用单元区域的多个备用单元。 第二导线被耦合到多个备用单元，并且被布置用于向第一备用单元区域的多个备用单元提供第二参考电压。