公开(公告)号：US20160197071A1

公开(公告)日：2016-07-07

申请号：US14861461

申请日：2015-09-22

Applicant: MediaTek Inc.

Inventor： Chao-Yang YEH ,  Yi-Feng CHEN ,  Jia-Wei FANG ,  Yao-Tsung HUANG ,  Ming-Cheng LEE

IPC: H01L27/08 ,  H01L49/02 ,  H01L21/283

CPC classification number: H01L27/0805 ,  H01L23/485 ,  H01L23/5223 ,  H01L27/0207 ,  H01L28/86

Abstract: The invention provides an integrated circuit device. The integrated circuit device includes a semiconductor substrate. An isolation structure is positioned in the semiconductor substrate. A first electrode and a second electrode are positioned on the semiconductor substrate and coupled to different voltage supplies. The first electrode laterally or parallelly overlaps the second electrode. The first electrode and the second electrode vertically overlap the isolation structure. As a result, leakage current is mitigated or eliminated so that the reliability and performance of the integrated circuit device are improved.

Abstract translation: 本发明提供一种集成电路装置。 集成电路器件包括半导体衬底。 隔离结构位于半导体衬底中。 第一电极和第二电极位于半导体衬底上并耦合到不同的电压源。 第一电极横向或平行地与第二电极重叠。 第一电极和第二电极垂直重叠隔离结构。 结果，泄漏电流被减轻或消除，从而提高了集成电路器件的可靠性和性能。