公开(公告)号：US11756983B2

公开(公告)日：2023-09-12

申请号：US17765361

申请日：2021-12-10

Applicant: Massachusetts Institute of Technology

Inventor： Rajeev J. Ram ,  Jaehwan Kim ,  Jin Xue ,  Zheng Li

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm−2, exceeding the performance of even high brightness gallium nitride LEDs.

公开(公告)号：US11624941B2

公开(公告)日：2023-04-11

申请号：US17227457

申请日：2021-04-12

Applicant: Massachusetts Institute of Technology

Inventor： Rajeev J. Ram ,  Marc De Cea Falco ,  Jin Xue

IPC: G02F1/025

Abstract: Semiconductor optical modulators are described that utilize bipolar junction transistor (BJT) structure within the optical modulator. The junctions within the BJT can be designed and biased to increase modulator efficiency and speed. An optical mode may be located in a selected region of the BJT structure to improve modulation efficiency. The BJT structure can be included in optical waveguides of interferometers and resonators to form optical modulators.

公开(公告)号：US20230139185A1

公开(公告)日：2023-05-04

申请号：US17765361

申请日：2021-12-10

Applicant: Massachusetts Institute of Technology

Inventor： Rajeev J. RAM ,  Jaehwan Kim ,  Jin Xue ,  Zheng Li

IPC: H01L27/15

Abstract: Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm−2, exceeding the performance of even high brightness gallium nitride LEDs.