公开(公告)号：US20230061138A1

公开(公告)日：2023-03-02

申请号：US17816749

申请日：2022-08-02

Applicant: MEDIATEK INC.

Inventor： Yu-Lin YANG ,  Ming-Cheng LEE ,  Yuan-Fu CHUNG

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/51 ,  H01L21/8234

Abstract: A semiconductor device structure includes a semiconductor substrate, a first device formed in the first region of the semiconductor substrate and a second device formed in the second region of the semiconductor substrate. The first device includes a first gate structure on the semiconductor substrate. The first gate structure includes a first gate dielectric layer on the semiconductor substrate and a first gate layer on the first gate dielectric layer. The second device includes a second gate structure on the semiconductor substrate. The second gate structure includes a second gate dielectric layer on the semiconductor substrate and a second gate layer on the second gate dielectric layer. The first gate dielectric layer of the first device and the second gate dielectric layer of the second device have different dielectric material compositions.