公开(公告)号：US20240290780A1

公开(公告)日：2024-08-29

申请号：US18413264

申请日：2024-01-16

Applicant: MEDIATEK INC.

Inventor： Zheng ZENG ,  Chia-Hsin HU ,  Chen-Ting LENG

IPC: H01L27/06 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/94

CPC classification number: H01L27/0629 ,  H01L23/5286 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/94

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, first and second well regions, first and second gate-all-around (GAA) field-effect transistor devices and a first dielectric layer. The first and second well regions are arranged in the semiconductor substrate and separated from each other. Top and bottom surfaces of the first and second well regions are aligned with top and bottom surfaces of the semiconductor substrate. The first and second GAA field-effect transistor devices are formed over the first and second well regions. A first gate structure of the first GAA field-effect transistor device is electrically connected to a power supply terminal. The first epitaxial source/drain features of the first GAA field-effect transistor are electrically connected to the second gate structure of the second GAA field-effect transistor. The second epitaxial source/drain features of the second GAA field-effect transistor are electrically connected to a ground terminal.