公开(公告)号：US20230070225A1

公开(公告)日：2023-03-09

申请号：US17903599

申请日：2022-09-06

Applicant: LG ELECTRONICS INC.

Inventor： Hyungseok BANG ,  Sukkoo JUNG ,  Hwankuk YUH ,  Jaechoon LEE

IPC: H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/40

Abstract: The embodiment relates to a semiconductor light emitting device for a display panel and a display device including the same. The semiconductor light emitting device can include a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second reflective electrode layer electrically connected to the second conductivity-type semiconductor layer, a passivation layer disposed on the light emitting structure, a first reflective electrode layer disposed on a side surface of the light emitting structure. The first reflective electrode layer can include a first-first reflective electrode layer in contact with a side surface of the light emitting structure and a first-second reflective electrode layer connected to the first-first reflective electrode layer and disposed on the passivation layer.

公开(公告)号：US20230069728A1

公开(公告)日：2023-03-02

申请号：US17799824

申请日：2020-02-13

Applicant: LG ELECTRONICS INC.

Inventor： Jeomoh KIM ,  Wonyong LEE ,  Sukkoo JUNG

IPC: H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/30 ,  H01L33/00

Abstract: Discussed is a display device and a method for manufacturing the display device, and more particularly, to a display device using a semiconductor light emitting element having a size of several μm to several tens of μm, and a method for manufacturing the display device. The display device can include a board including a wiring electrode; and a plurality of semiconductor light emitting diodes electrically connected to the wiring electrode. Each of the plurality of semiconductor light emitting diodes an include a first conductivity type semiconductor layer, an active layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the active layer. The first conductivity type semiconductor layer can include a plurality of recessed portions.

公开(公告)号：US20250040307A1

公开(公告)日：2025-01-30

申请号：US18716839

申请日：2022-12-05

Applicant: LG ELECTRONICS INC.

Inventor： Younghak CHANG ,  Sukkoo JUNG

IPC: H01L33/38 ,  H01L25/16 ,  H01L33/44

Abstract: A semiconductor light emitting device includes a light emitting layer, a first electrode below the light emitting layer, a second electrode on the light emitting layer, and a passivation layer surrounding the light emitting layer. The size of the first electrode may be larger than the size of the light emitting layer.

公开(公告)号：US20250015242A1

公开(公告)日：2025-01-09

申请号：US18711005

申请日：2021-11-16

Applicant: LG ELECTRONICS INC.

Inventor： Younghak CHANG ,  Sukkoo JUNG ,  Hyungseok BANG

IPC: H01L33/62 ,  H01L25/16

Abstract: A display device includes a substrate including a plurality of pixels, and semiconductor light emitting device in each of the plurality of pixels. The substrate may include an electrode pad part, and the semiconductor light emitting device includes electrodes. The electrode is disposed on the electrode pad part, and at least one of the electrode pad part or the electrode may have a texture structure.

公开(公告)号：US20240274751A1

公开(公告)日：2024-08-15

申请号：US18566943

申请日：2021-06-07

Applicant: LG ELECTRONICS INC.

Inventor： Dongwook KIM ,  Sukkoo JUNG ,  Daesung KANG ,  Donghun KANG

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/12 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/30

Abstract: The present disclosure relates to a red-light-emitting semiconductor light-emitting device, which is applicable to a technical field related to a display device, for example, can be used in a display device, and to a method for manufacturing same. The present disclosure may comprise: a substrate; a buffer layer located on the substrate; a first conductive contact layer located on the buffer layer; a first conductive constraint layer located on the first conductive contact layer; an active layer located on the first conductive constraint layer; a second conductive constraint layer located on the active layer; and a current concentration structure located on at least one side of between the first conductive contact layer and the first conductive constraint layer and between the second conductive contact layer and the second conductive constraint layer. In this case, the current concentration structure may include: a lattice strain induction layer; and a high resistance layer which is in contact with the lattice strain induction layer, separated from the lattice strain induction layer, and distributed to form a current barrier.

公开(公告)号：US20190206954A1

公开(公告)日：2019-07-04

申请号：US15963691

申请日：2018-04-26

Applicant: LG ELECTRONICS INC.

Inventor： Younghak CHANG ,  Sukkoo JUNG

IPC: H01L27/32 ,  H01L33/24

CPC classification number: H01L27/3241 ,  H01L27/3209 ,  H01L27/3211 ,  H01L33/24

Abstract: The present invention relates to a display device, and particularly, to a display device using a semiconductor light emitting device. The display device includes a substrate including an electrode, a plurality of light emitting devices assembled on the substrate, and a color conversion part stacked on the plurality of semiconductor light emitting devices and converting a color. Specifically, the color conversion part includes: a porous layer, a wavelength conversion layer, and a reflective layer, wherein the wavelength conversion layer is disposed between the porous layer and the reflective layer, and the porous layer is formed of an electro-polishable porous terminal. A surface of the reflective layer includes a first region and a second region surrounded by the first region, the second region has roughness higher than that of the first region, and a plurality of first protrusions are disposed in the second region.