公开(公告)号：US20220121387A1

公开(公告)日：2022-04-21

申请号：US17076274

申请日：2020-10-21

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Jeongseok Ha ,  Seokju Han ,  Jieun Oh

IPC: G06F3/06

Abstract: Disclosed is a method for estimating a read reference voltage for a flash memory using a neural network and an apparatus therefor. According to an embodiment of the inventive concept, a method for reading a flash memory may include receiving predetermined variable values with respect to a flash memory, estimating a read reference voltage corresponding to the received variable values, using a neural network of a pre-trained learning model with respect to the variable values, and reading the flash memory, using the estimated read reference voltage. The method may further include updating the learning model of the neural network by reflecting a difference in characteristics between individual chips constituting the flash memory.