公开(公告)号：US12218238B2

公开(公告)日：2025-02-04

申请号：US17522851

申请日：2021-11-09

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon Kim ,  Hyeongrak Lim

IPC: H01L21/00 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78

Abstract: Disclosed are a growth structure for a strained channel, and a strained channel using the same and a method of manufacturing a device using the same. The growth structure for a strained channel includes a support substrate, a strain-relaxed buffer (SRB) layer disposed on a support substrate, a base growth layer grown to have one composition on the SRB layer, and a strained channel layer grown to have another composition on the base growth layer. The strained channel layer may include at least one of a tensile-strained channel layer or a compressively strained channel layer.