公开(公告)号：US20140038385A1

公开(公告)日：2014-02-06

申请号：US13946307

申请日：2013-07-19

申请人： Kil-Ho LEE ,  Ki-Joon KIM ,  Se-Woong PARK

发明人： Kil-Ho LEE ,  Ki-Joon KIM ,  Se-Woong PARK

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76832 ,  H01L27/228 ,  H01L43/08

摘要： Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.

摘要翻译： 非易失性存储器件及其制造方法包括：在衬底的第一区域中形成晶体管，形成连接到晶体管的触点，形成二维地设置在第二区域中的信息存储部分 的基板，顺序地形成覆盖接触的信息存储部分的停止膜和层间绝缘膜，形成在接触件上露出停止膜的第一沟槽，并形成延伸穿过停止膜的第二沟槽 暴露触点，其中第一沟槽的底表面低于信息存储部分的底面。

公开(公告)号：US20130221417A1

公开(公告)日：2013-08-29

申请号：US13686212

申请日：2012-11-27

申请人： Kilho LEE ,  Ki Joon KIM ,  Se-Woong PARK

发明人： Kilho LEE ,  Ki Joon KIM ,  Se-Woong PARK

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  H01L27/10888 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82

摘要： Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit lines on and coupled to the first contacts. The second bit lines may each have a lowermost surface lower than a lowermost surface of the data storages.