Abstract:
A method of using scatterometry measurements to determine and control conductive interconnect profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality of conductive interconnects having a known profile, providing a substrate having at least one grating structure formed thereabove, the formed grating structure comprised of a plurality of conductive interconnects having an unknown profile, and illuminating the formed grating structure. The method further comprises measuring light reflected off of the grating structure to generate an optical characteristic trace for the formed grating structure and determining a profile of the gate electrode structures comprising the formed grating structure by correlating the generated optical characteristic trace to an optical characteristic trace from the library. In another embodiment, the method disclosed herein comprises comparing a generated optical characteristic trace of conductive interconnects having an unknown profile to a target trace established for conductive interconnects having an ideal or acceptable profile.
Abstract:
The present invention is generally directed to various methods and systems for dynamically adjusting metrology sampling based upon available metrology capacity. In one illustrative embodiment, the method comprises providing a metrology control unit that is adapted to determine a baseline metrology sampling rate for at least one metrology operation, determining available metrology capacity, and providing the determined available metrology capacity to the metrology control unit wherein the metrology control unit determines a new metrology sampling rate based upon the determined available metrology capacity.
Abstract:
The present invention is generally directed to various methods and systems for adaptive metrology sampling plans that may be employed to monitor various manufacturing processes. In one example, the method includes creating a plurality of metrology sampling rules, assigning each of the metrology sampling rules a sampling weight value, identifying at least one workpiece that satisfies at least one of the metrology sampling rules, assigning the sampling weight value for each of the satisfied metrology sampling rules with the identified workpieces that satisfy the rules, and indicating a metrology operation should be performed when a cumulative total of the sampling weight values is at least equal to a pre-established trigger value.
Abstract:
A method and an apparatus for selectively applying correction to a process control. Manufacturing data relating to the processing of a workpiece is acquired. The manufacturing data includes metrology data relating to the processed workpiece. An adjustment for at least a first or a second control input parameter is determined based upon the manufacturing data. The first and second control input parameters are organized to isolate the first control input parameter from the second control input parameter for adjusting at least one of the first and the second control input parameters, using a controller.
Abstract:
The present invention provides a method and apparatus for modifying process selectivities based on process state information. The method includes accessing process state information associated with at least one material removal process, determining at least one selectivity based on the process state information, and modifying at least one process parameter of said material removal process based on said at least one determined selectivity.
Abstract:
A method includes receiving a current residual vector. The current residual vector is compared to a plurality of historical residual vectors. Each historical residual vector has an associated fault classification code. At least one of the historical residual vectors is selected responsive to determining that the current residual vector matches at least one of the historical residual vectors. A fault condition is classified based on the fault classification code associated with the selected historical residual vector.
Abstract:
A method and an apparatus for matching data related to an integrated metrology tool and a standalone metrology tool. At least one semiconductor wafer is processed. An integrated metrology tool and/or a standalone metrology tool is matched based upon a difference between metrology data relating to a processed semiconductor wafer acquired by the integrated metrology tool and metrology data acquired by the standalone metrology tool, using a controller.
Abstract:
A method and an apparatus are provided for performing run-to-run control of trench profiles. At least one semiconductor wafer is processed. A trench metrology data from the processed semiconductor wafer is acquired. Data relating to at least one process chamber characteristic is acquired while processing the semiconductor wafer. A chamber characteristic adjustment process is performed in response to the trench metrology data and the data relating to the processing chamber characteristic. A feedback adjustment of the processing chamber characteristic is performed in response to the chamber characteristic adjustment process.
Abstract:
A method for characterizing a misprocessed wafer includes providing a wafer having a grating structure; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and characterizing a misprocessed condition of the wafer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to characterize a misprocessed condition of the wafer based on the reflection profile.
Abstract:
The present invention provides a method and apparatus for scheduling a plurality of processing tools. The method comprises providing a first processing tool and a plurality of second processing tools, selecting one of the plurality of second processing tools, and determining a target output parameter of a combination of processing tools comprising said first processing tool and said selected one of the plurality of second processing tools. The method also includes determining at least one input parameter of a process model for controlling the first processing tool based upon the target output parameter of the combination of processing tools.