公开(公告)号：US20220326602A1

公开(公告)日：2022-10-13

申请号：US17698404

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Hye Young KIM

IPC: G03F1/64 ,  G03F7/20 ,  H01L21/02 ,  H01L21/324 ,  H01L29/16

Abstract: This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

公开(公告)号：US20220326600A1

公开(公告)日：2022-10-13

申请号：US17698370

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Hye Young KIM

IPC: G03F1/64 ,  G03F7/20

Abstract: This application relates to a pellicle for extreme ultraviolet lithography containing amorphous carbon and a manufacturing method thereof. In one aspect, the pellicle includes a substrate having an opening formed in a central portion, a support layer formed on the substrate to cover the opening, and a pellicle layer formed on the support layer and containing amorphous carbon. The pellicle layer may include a core layer formed on the support layer, and a capping layer formed on the core layer and may further include a buffer layer. At least one of the core layer, the capping layer, or the buffer layer may be an amorphous carbon layer.

公开(公告)号：US20220146928A1

公开(公告)日：2022-05-12

申请号：US17454377

申请日：2021-11-10

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Hye Young KIM

IPC: G03F1/64 ,  C01B32/182 ,  G03F7/20

Abstract: This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.