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1.发明申请公开(公告)号：US20190318978A1
公开(公告)日：2019-10-17
申请号：US16386102
申请日：2019-04-16
Inventor： Byung Jin CHO , Gyusoup LEE , Choong Sun KIM , Yong Jun KIM , Seongho KIM , Hyeongdo CHOI
IPC: H01L23/373 , H01L35/28 , H01L23/367
Abstract: Provided is a flexible heat sink for a flexible thermoelectric device including a first metal thin film; a phase change layer including a highly conductive foam formed on the first metal thin film and a phase change material filling pores of the highly conductive foam; and a second metal thin film formed on the phase change layer. The flexible heat sink for a flexible thermoelectric device has excellent flexibility, a high heat absorption rate, and a small size for heat sinking performance.
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公开(公告)号：US20220246716A1
公开(公告)日：2022-08-04
申请号：US17591381
申请日：2022-02-02
Inventor： Hyunsoo JIN , Byung Jin CHO , Seongho KIM
IPC: H01L49/02 , H01L27/108 , H01G4/10
Abstract: Disclosed are a capacitor for DRAM, a DRAM including the same, and a method of fabricating the same. The DRAM capacitor according to an embodiment may include a first electrode of the DRAM; a second electrode spaced apart from the first electrode; and a dielectric layer including a HfZrO film disposed between the first electrode and the second electrode. The HfZrO film may have an intermediate state corresponding to a phase transition region between a first state in which a tetragonal crystalline phase with anti-ferroelectricity property or a tetragonal crystalline phase is dominant, and a second state in which the orthorhombic crystalline phase with anti-ferroelectricity property or the orthorhombic crystalline phase is dominant. The HfZrO film may include both of the tetragonal crystalline phase and the orthorhombic crystalline phase. The HfZrO film maintains an intermediate state corresponding to the phase transition region within the operating voltage range of the capacitor.
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