公开(公告)号：US20220115543A1

公开(公告)日：2022-04-14

申请号：US17501405

申请日：2021-10-14

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byung Jin CHO ,  Min Ju KIM ,  Eui Joong SHIN ,  Jae Joong JUNG

IPC: H01L29/792 ,  H01L29/423 ,  H01L51/05

Abstract: A charge trapping non-volatile organic memory device according to the present invention has a structure in which an organic matter-based blocking layer, a trapping layer, and a tunneling layer are sequentially positioned between a gate and an organic semiconductor layer positioned on an insulating substrate, the trapping layer including a metal oxide and a polymer, and has an organic-inorganic composite film in which the metal oxide is dispersed in a polymer matrix in units of atoms.